Staff Publications

Staff Publications

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    'Staff publications' is the digital repository of Wageningen University & Research

    'Staff publications' contains references to publications authored by Wageningen University staff from 1976 onward.

    Publications authored by the staff of the Research Institutes are available from 1995 onwards.

    Full text documents are added when available. The database is updated daily and currently holds about 240,000 items, of which 72,000 in open access.

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Record number 342932
Title Si-C linked organic monolayers on crystalline silicon surfaces as alternative gate insulators
Author(s) Faber, E.J.; Smet, L.C.P.M. de; Olthuis, W.; Zuilhof, H.; Sudhölter, E.J.R.; Bergveld, P.; Berg, A. van den
Source ChemPhysChem 6 (2005)10. - ISSN 1439-4235 - p. 2153 - 2166.
Department(s) Laboratory for Organic Chemistry
Chemical Biological Soil Laboratory
Publication type Refereed Article in a scientific journal
Publication year 2005
Keyword(s) self-assembled monolayers - hydrogen-terminated silicon - metal-semiconductor diodes - alkyl monolayers - interface states - schottky diodes - distance dependence - electron-transport - through-bond - junctions
Abstract Herein, the influence of silicon surface modification via SiCnH2n+1 (n=10,12,16,22) monolayer-based devices on p-type 100 and n-type 100 silicon is studied by forming MIS (metal-insulator-semiconductor) diodes using a mercury probe. From current density-voltage (J-V) and capacitance-voltage (C-V) measurements, the relevant parameters describing the electrical behavior of these diodes are derived, such as the diode ideality factor, the effective barrier height, the flatband voltage, the barrier height, the monolayer dielectric constant, the tunneling attenuation factor, and the fixed charge density (Nf). It is shown that the J-V behavior of our MIS structures could be precisely tuned via the monolayer thickness. The use of n-type silicon resulted in lower diode ideality factors as compared to p-type silicon. A similar flatband voltage, independent of monolayer thickness, was found, indicating similar properties for all silicon-monolayer interfaces. An exception was the C10-based monolayer device on p-type silicon. Furthermore, low values of Nf were found for monolayers on p-type silicon (6×1011 cm-2). These results suggest that SiC linked monolayers on flat silicon may be a viable material for future electronic devices.
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