Staff Publications

Staff Publications

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    'Staff publications' is the digital repository of Wageningen University & Research

    'Staff publications' contains references to publications authored by Wageningen University staff from 1976 onward.

    Publications authored by the staff of the Research Institutes are available from 1995 onwards.

    Full text documents are added when available. The database is updated daily and currently holds about 240,000 items, of which 72,000 in open access.

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Record number 370053
Title Silicon surface passivation by organic monolayers: Minority charge carrier lifetime measurements and Kelvin probe investigations
Author(s) Sieval, A.B.; Huisman, C.L.; Schonecker, A.; Schuurmans, F.M.; Heide, A.S.H. van der; Goossens, A.; Sinke, W.C.; Zuilhof, H.; Sudhölter, E.J.R.
Source The Journal of Physical Chemistry Part B: Condensed Matter, Materials, Surfaces, Interfaces & Biophysical 107 (2003)28. - ISSN 1520-6106 - p. 6846 - 6852.
Department(s) Laboratory for Organic Chemistry
Publication type Refereed Article in a scientific journal
Publication year 2003
Keyword(s) hydrogen-terminated silicon - ultrathin sio2 overlayers - alkyl monolayers - recombination velocity - photoconductance decay - si(111) surfaces - germanium surfaces - si-sio2 interface - si(100) surface - air
Abstract The silicon surface passivation of monolayers of organic compounds that are bound to Si surfaces by a covalent Si-C bond has been investigated. The effective lifetime eff of minority charge carriers in the surface-modified semiconductor has been determined by modulated free carrier absorption (MFCA) measurements. The results show that on 1-2 ·cm p-type Si(100) surfaces modified with a monolayer obtained from CH2=CH-(CH2)8-C(=O)-O-CH3 maximum effective lifetimes eff 130 s can be obtained. This value corresponds to a maximum surface recombination velocity Seff of 120 cm/s, a value that is similar to those obtained using other passivation techniques, which demonstrates that these monolayers provide an interesting alternative for silicon surface passivation. During these MFCA measurements an unusual time dependence of the effective lifetime is observed: eff rises continuously during illumination of the substrate. Kelvin probe measurements show that there is a slow shift of the Fermi level of the semiconductor under illumination, which seems to be the result of a slow, reversible filling of surface traps
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