Staff Publications

Staff Publications

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    'Staff publications' is the digital repository of Wageningen University & Research

    'Staff publications' contains references to publications authored by Wageningen University staff from 1976 onward.

    Publications authored by the staff of the Research Institutes are available from 1995 onwards.

    Full text documents are added when available. The database is updated daily and currently holds about 240,000 items, of which 72,000 in open access.

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Record number 405423
Title Hg/Molecular Monolayer-Si Junctions: Electrical Interplay between Monolayer Properties and Semiconductor Doping Density
Author(s) Yaffe, O.; Scheres, L.M.W.; Segev, O.; Biller, A.; Ron, I.; Salomon, E.; Giesbers, M.; Kahn, A.; Kronik, L.; Zuilhof, H.; Vilan, A.; Cahen, D.
Source The Journal of Physical Chemistry Part C: Nanomaterials and Interfaces 114 (2010)22. - ISSN 1932-7447 - p. 10270 - 10279.
Department(s) Laboratory for Organic Chemistry
Publication type Refereed Article in a scientific journal
Publication year 2010
Keyword(s) crystalline silicon surfaces - voltaic energy-conversion - linked organic monolayers - self-assembled monolayers - flat h-si(111) surfaces - alkyl chain monolayers - metal work function - mis tunnel-diodes - current transport - si(111) surfaces
Abstract Metal-organic molecule-semiconductor junctions are controlled not only by the molecular properties, as in metal-organic molecule-metal junctions, but also by effects of the molecular dipole, the dipolar molecule-semiconductor link, and molecule-semiconductor charge transfer, and by the effects of all these on the semiconductor depletion layer (i.e., on the internal semiconductor barrier to charge transport). Here, we report on and compare the electrical properties (current-voltage, capacitance-voltage, and work function) of large area Hg/organic monolayer-Si junctions with alkyl and alkenyl monolayers on moderately and highly doped n-Si, and combine the experimental data with simulations of charge transport and electronic structure calculations. We show that, for moderately doped Si, the internal semiconductor barrier completely controls transport and the attached molecules influence the transport of such junctions only in that they drive the Si into inversion. The resulting minority carrier-controlled junction is not sensitive to molecular changes in the organic monolayer at reverse and low forward bias and is controlled by series resistance at higher forward bias. However, in the case of highly doped Si, the internal barrier is smaller, and as a result, the charge transport properties of the junction are affected by changing from an alkyl to an alkenyl monolayer. We propose that the double bond near the surface primarily increases the coupling between the organic monolayer and the Si, which increases the current density at a given bias by increasing the contact conductance.
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