Depending on the temperature, crystal polytype, and crystal position, two opposite schemes have been observed for the optical alignment of the populations of spin sublevels in the ground state of a Si vacancy in SiC upon irradiation with unpolarized light at frequencies of zero-phonon lines. A giant change by a factor of 2¿3 has been found in the luminescence intensity of zero-phonon lines in zero magnetic field upon absorption of microwave radiation with energy equal to the fine-structure splitting of spin sublevels of the vacancy ground state, which opens up possibilities for magnetic resonance detection at a single vacancy.
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