Staff Publications

Staff Publications

  • external user (warningwarning)
  • Log in as
  • language uk
  • About

    'Staff publications' is the digital repository of Wageningen University & Research

    'Staff publications' contains references to publications authored by Wageningen University staff from 1976 onward.

    Publications authored by the staff of the Research Institutes are available from 1995 onwards.

    Full text documents are added when available. The database is updated daily and currently holds about 240,000 items, of which 72,000 in open access.

    We have a manual that explains all the features 

Record number 66128
Title Monolayers of 1-Alkynes on the H-Terminated Si(100) surface
Author(s) Sieval, A.B.; Opitz, R.; Maas, H.P.A.; Schoeman, M.G.; Meijer, G.; Vergeldt, F.J.; Zuilhof, H.; Sudh"lter, E.J.R.
Source Langmuir 16 (2000)26. - ISSN 0743-7463 - p. 10359 - 10368.
DOI https://doi.org/10.1021/la001109n
Department(s) Organic Chemistry
Publication type Refereed Article in a scientific journal
Publication year 2000
Abstract Monolayers of a series of 1-alkynes, from 1-dodecyne to 1-octadecyne, have been prepared on the hydrogen-terminated Si(100) surface via a thermal reaction of the organic compound with this Si surface. An efficient procedure is presented for the synthesis of 1-alkynes from the corresponding 1-alkenes. The resulting monolayers were characterized by water contact angle measurements, ATR infrared spectroscopy, and X-ray reflectivity. The results show that these 1-alkynes give well-ordered, covalently bonded monolayers, which are at least as ordered as those of the corresponding 1-alkenes. The exact binding geometry of the 1-alkyne to the Si surface was investigated. The results from IR spectroscopy and X-ray reflectivity measurements indicate that the 1-alkynes form two Si-C bonds to the surface per reacting molecule. Quantum mechanical calculations confirm that this formation of two Si-C bonds is not only chemically possible but also energetically much more favorable than formation of only one Si-C bond per reacting molecule.
Comments
There are no comments yet. You can post the first one!
Post a comment
 
Please log in to use this service. Login as Wageningen University & Research user or guest user in upper right hand corner of this page.